STMicroelectronics STB18NM60N
This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.| Part No. | STB18NM60N |
|---|---|
| Datasheet | STB18NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes VDSS (@Tjmax) RDS(on) max. ID PW STB18NM60N STF18NM60N STI18NM60N STP18NM60N STW18NM60N 650 V 110 W 30 W < 0.285 Ω 13 A 110 W● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance Application Switching applications
DESCRIPTION
These devices are made using the second generation of MDmesh™ technology. 3 2 1 TO-247 3 2 1 TO-220 123 I²PAK 3 1 D²PAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram $ ' 3 Table 1. Device summary Order codes STB18NM60N STF18NM60N STI18NM60N STP18NM60N STW18NM60N
