STB18NM60N Overview
isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·
STB18NM60N Key Features
- Drain Current ID= 13A@ TC=25℃ -Drain Source Voltage

