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STB18NM60ND

Manufacturer: STMicroelectronics

STB18NM60ND datasheet by STMicroelectronics.

STB18NM60ND datasheet preview

STB18NM60ND Datasheet Details

Part number STB18NM60ND
Datasheet STB18NM60ND-STMicroelectronics.pdf
File Size 930.91 KB
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
STB18NM60ND page 2 STB18NM60ND page 3

STB18NM60ND Overview

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices.

STB18NM60ND Key Features

  • The worldwide best RDS(on)- area amongst the fast recovery diode devices
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely high dv/dt and avalanche capabilities

STB18NM60ND from other manufacturers

View STB18NM60ND datasheet index

Brand Logo Part Number Description Other Manufacturers
INCHANGE Logo STB18NM60ND N-Channel MOSFET INCHANGE
INCHANGE Logo STB18NM60N N-Channel MOSFET INCHANGE
ST Microelectronics Logo STB18NM60N Power MOSFET ST Microelectronics
STMicroelectronics logo - Manufacturer

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