STB18NM60N Overview
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-220FP Figure 1. Internal schematic diagram
STB18NM60N Key Features
- 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance

