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STB18NM60ND - N-Channel MOSFET

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INCHANGE

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STB18NM60ND N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – STB18NM60ND

Datasheet Details

Part number	STB18NM60ND
Manufacturer	INCHANGE
File Size	264.90 KB
Description	N-Channel MOSFET
Datasheet	STB18NM60ND Datasheet
Additional preview pages of the STB18NM60ND datasheet.

STB18NM60ND Product details

Description

Low Drain-Source On-Resistance APPLICATIONS

Max.

Features

Drain Current.
ID= 13A@ TC=25℃.
Drain Source Voltage- : VDSS= 600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Dec 4, 2020 |