STMicroelectronics STB18NM80
This is information on a product in full production.| Part No. | STB18NM80 |
|---|---|
| Datasheet | STB18NM80 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes STB18NM80 STF18NM80 STP18NM80 STW18NM80 VDSS 800 V 800 V 800 V 800 V RDS(on) max < 0.295 Ω < 0.295 Ω < 0.295 Ω < 0.295 Ω ID 3 3 1 2 17 A 17 A (1) 17 A 17 A 1 D²PAK TO-220FP 1. Limited only by maximum temperature allowed 3●
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● 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 2 2 1 3 TO-220 TO-247 Application
● Figure 1. Internal schematic diagram Switching applications $
DESCRIPTION
These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Table 1. Device summary Marking Package D²PAK TO-220FP 18NM80 STP18NM80 STW18NM80 TO-220 TO-247 ' 3 !
