STMicroelectronics STB19NB20
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.| Part No. | STB19NB20 |
|---|---|
| Datasheet | STB19NB20 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performance.APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVEABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR V GS ID ID I DM (● ) P tot dv/dt( 1) T s tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC o Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junct ion T emperature D2PAK TO-263 (suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM Value 200 200 ± 30 19 12 76 125 1 5.5 -65 to 150 150 ( 1) ISD ≤ 19A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W /o C V/ns o C o C (●) Pulse w...
