STB20N90K5 Datasheet | STMicroelectronics

N-channel 900 V, 0.21 Ω typ., 20 A MDmesh™ K5 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475V1 Features Order code 900 V - Industry’s lowest RDS(on) x area - Industry’s best FoM (figure of merit) - Ultra-low gate charge - 100% avalanche tested - Zener-protected RDS(on ) max. 0.25 Ω ID 20 A Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high...