STMicroelectronics STB20N90K5
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 S(3) technology based on an innovative proprietary vertical structure. The result is a AM01476v1_tab dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.| Part No. | STB20N90K5 |
|---|---|
| Datasheet | STB20N90K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel 900V 20A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on ) max. ID STB20N90K5 900 V 250 mΩ 20 A● Very low FoM (figure of merit)
● Ultra-low gate charge
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applications G(1)DESCRIPTION
Product status link STB20N90K5 Product summary Order code STB20N90K5 Marking 20N90K5 Package D²PAK Packing Tape and reel DS11568 - Rev 5 - August 2025 For further information, contact your local STMicroelectronics sales office. STB20N90K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope dv/dt (3) MOSFET dv/dt ruggedness TJ Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 20 A, di/dt ≤ 100 A/μs; VDS peak ≤ V(BR)DSS, VDD= 450 V.
