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STB20N95K5 - N-channel Power MOSFET

General Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order code STB20N95K5 STF20N95K5 STP20N95K5 STW20N95K5 VDS 950 V RDS(on) max. 0.330 Ω ID 17.5 A PTOT 250 W 40 W 250 W.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 N-channel 950 V, 0.275 Ω typ., 17.5 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 Datasheet p- parocdukcatiogn deasta Figure 1: Internal schematic diagram Features Order code STB20N95K5 STF20N95K5 STP20N95K5 STW20N95K5 VDS 950 V RDS(on) max. 0.330 Ω ID 17.5 A PTOT 250 W 40 W 250 W  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.