STB20N95K5 Datasheet
STB20N95K5 Datasheet (STMicroelectronics)
STMicroelectronics
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and .
Order code STB20N95K5 STF20N95K5 STP20N95K5 STW20N95K5
VDS 950 V
RDS(on) max. 0.330 Ω
ID 17.5 A
PTOT 250 W 40 W
250 W
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figure of merit)
* Ultra-low gate charge
* 100% avalanche tested
* Zener-protected
Applications
* Switching applicatio.
STB20N95K5 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 950 V VGS Gate-Source Voltage-Continuo.
*Drain Current : ID= 17.5A@ TC=25℃
*Drain Source Voltage
: VDSS= 950V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 330mΩ(Max) @ VGS= 10V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
*motor drive, DC-DC converter, power.