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STB23N80K5 - N-Channel Power MOSFET

General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order code VDS RDS(on) max. ID STB23N80K5 800 V 0.28 Ω 16 A.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected PTOT 190 W.

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Full PDF Text Transcription for STB23N80K5 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STB23N80K5. For precise diagrams, and layout, please refer to the original PDF.

STB23N80K5 Datasheet N-channel 800 V, 0.23 Ω typ., 16 A MDmesh K5 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) NG1D2TS3Z Features Order code VDS RD...

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B 2 3 1 D²PAK D(2, TAB) G(1) S(3) NG1D2TS3Z Features Order code VDS RDS(on) max. ID STB23N80K5 800 V 0.28 Ω 16 A • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected PTOT 190 W Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

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