STMicroelectronics STB23N80K5
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.| Part No. | STB23N80K5 |
|---|---|
| Datasheet | STB23N80K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STB23N80K5 800 V 0.28 Ω 16 A● Industry’s lowest RDS(on) x area
● Industry’s best FoM (figure of merit)
● Ultra-low gate charge
● 100% avalanche tested
● Zener-protected PTOT 190 W
APPLICATIONS
● Switching applicationsDESCRIPTION
Product status link STB23N80K5 Product summary Order code STB23N80K5 Marking 23N80K5 Package D²PAK Packing Tape and reel DS11240 - Rev 2 - May 2021 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope dv/dt (3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 16 A, di/dt=100 A/μs; VDS(peak) < V(BR)DSS, VDD = 80% V(BR)DSS.
