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STB23NM50N - N-channel Power MOSFET

General Description

These devices are made using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Order codes STB23NM50N STF23NM50N STP23NM50N STW23NM50N VDSS (@Tjmax) 550 V RDS(on) max. < 0.19 Ω ID 17 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription for STB23NM50N (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STB23NM50N. For precise diagrams, and layout, please refer to the original PDF.

STB23NM50N, STF23NM50N STP23NM50N, STW23NM50N N-channel 500 V, 0.162 Ω, 17 A TO-220, TO-220FP, TO-247, D²PAK MDmesh™ II Power MOSFET Features Order codes STB23NM50N STF23...

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7, D²PAK MDmesh™ II Power MOSFET Features Order codes STB23NM50N STF23NM50N STP23NM50N STW23NM50N VDSS (@Tjmax) 550 V RDS(on) max. < 0.19 Ω ID 17 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-220FP 3 2 1 TO-220 3

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INCHANGE Logo STB23NM50N N-Channel MOSFET INCHANGE

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