| Part Number | STB23NM50N |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s .
Order codes
STB23NM50N STF23NM50N STP23NM50N STW23NM50N
VDSS (@Tjmax)
550 V
RDS(on) max.
< 0.19 Ω
ID 17 A
* 100% avalanche tested * Low input capacitance and gate charge * Low gate input resistance Application Switching applications Description These devices are made using the second generati. |
STB23NM50N Datasheet
The STB23NM50N is a N-channel Power MOSFET.
| Part Number | STB23NM50N |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
STB23NM50N
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Mini.
*With To-263(D2PAK) package *Low input capacitance and gate charge *Low gate input resistance *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE . |