Datasheet4U Logo Datasheet4U.com

STB24N65M2 - N-channel MOSFET

Datasheet Summary

Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Features

  • Order codes STB24N65M2 STF24N65M2 STP24N65M2 VDS 650 V RDS(on) max 0.23 Ω ID 16 A.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

Datasheet preview – STB24N65M2

Datasheet Details

Part number STB24N65M2
Manufacturer STMicroelectronics
File Size 969.41 KB
Description N-channel MOSFET
Datasheet download datasheet STB24N65M2 Datasheet
Additional preview pages of the STB24N65M2 datasheet.

📁 Similar Datasheet

  • STB24NF10 - N-CHANNEL POWER MOSFET (ST Microelectronics)
  • STB24NM60N - N-Channel MOSFET (INCHANGE)
  • STB24NM65N - N-Channel MOSFET (INCHANGE)
  • STB200N6F3 - 60V N-Channel Power MOSFET (ST Microelectronics)
  • STB200NF03 - N-CHANNEL POWER MOSFET (ST Microelectronics)
  • STB200NF03-1 - N-CHANNEL POWER MOSFET (ST Microelectronics)
  • STB200NF03T4 - N-Channel 30V MOSFET (VBsemi)
  • STB200NF04 - N-CHANNEL POWER MOSFET (ST Microelectronics)
  • STB200NF04-1 - N-CHANNEL POWER MOSFET (ST Microelectronics)
  • STB200NF04L - N-CHANNEL STripFET II MOSFET (ST Microelectronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STB24N65M2, STF24N65M2, STP24N65M2 N-channel 650 V, 0.185 Ω typ., 16 A MDmesh M2 Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order codes STB24N65M2 STF24N65M2 STP24N65M2 VDS 650 V RDS(on) max 0.23 Ω ID 16 A  Extremely low gate charge  Excellent output capacitance (Coss) profile  100% avalanche tested  Zener-protected Applications  Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Published: |