STMicroelectronics STB26NM60N
This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making it suitable for the most demanding high-efficiency converters.| Part No. | STB26NM60N |
|---|---|
| Datasheet | STB26NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type STB26NM60N STF26NM60N STI26NM60N STP26NM60N STW26NM60N●
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● TAB TAB VDSS 600 V 600 V 600 V 600 V 600 V RDS(on) max < 0.165 Ω < 0.165 Ω < 0.165 Ω < 0.165 Ω < 0.165 Ω ID 3 20 A 20 A 20 A 20 A 20 A TAB 1 2 3 12 3 1 2 TO-220FP I²PAK TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. 3 1 2 1 3 D²PAK TO-247 Application
● Internal schematic diagram Switching applications $ 4!"
DESCRIPTION
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. ' 3 3# Table 1. Device summary Order codes Marking Package D²PAK TO-220FP 26NM60N I²PAK Tube TO-220 TO-247 Packaging Tape and reel STB26NM60N STF26NM60N STI26NM60N STP26NM60N STW26NM60N March 2012 This is information on a product in full production. Doc ID 15642 Rev 4 1/23 23 Free Datasheet Contents STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
