STB26NM60N Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET applies a new vertical structure to the pany’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making it suitable for the most demanding high-efficiency converters. Doc ID 15642 Rev 4 1/23 .st.
STB26NM60N Key Features
- Internal schematic diagram