STB26NM60ND Datasheet (PDF) Download
STMicroelectronics
STB26NM60ND

Overview

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance.

  • 175 21 A