STB28N60M2 Datasheet | STMicroelectronics

STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247 - production data Features Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2 VDS @ TJmax 650 V RDS(on) max. 0.150 Ω ID 22 A Figure 1: Internal schematic diagram D (2 TAB ) - Extremely low gate charge - Excellent output capacitance (COSS) profile - 100% avalanche tested - Zener-protected Applications - Switching applications - LCC converters, resonant converters Description These devices are N-channel Power MOSFETs G(1) developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure,...