STB30N65DM6AG Datasheet (STMicroelectronics)

Part STB30N65DM6AG
Description Automotive-grade N-channel Power MOSFET
Category MOSFET
Manufacturer STMicroelectronics
Size 390.40 KB
Pricing from 8.13 USD, available from Newark and DigiKey.Powered by Octopart
STMicroelectronics

STB30N65DM6AG Overview

Key Specifications

Max Operating Temp: 150 °C
Min Operating Temp: -55 °C

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Key Features

  • AEC-Q101 qualified
  • Fast-recovery body diode
  • Lower RDS(on) per area vs previous generation
  • Low gate charge, input capacitance and resistance
  • 100% avalanche tested

Price & Availability

Seller Inventory Price Breaks Buy
Newark 2853 1+ : 8.13 USD
10+ : 6.07 USD
25+ : 5.66 USD
50+ : 5.26 USD
View Offer
DigiKey 768 1+ : 7.14 USD
10+ : 4.827 USD
100+ : 3.61 USD
View Offer