Datasheet Summary
Automotive-grade N-channel 650 V, 102 mΩ typ., 28 A MDmesh DM6 Power MOSFET in a D²PAK package
TAB 2 3 1
D²PAK
D(2, TAB)
G(1)
S(3)
AM01476v1_tab
Features
Order code STB30N65DM6AG
VDS 650 V
RDS(on) max. 115 mΩ
ID 28 A
- AEC-Q101 qualified
- Fast-recovery body diode
- Lower RDS(on) per area vs previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
- Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. pared with the previous MDmesh fast generation, DM6 bines very low recovery...