STMicroelectronics STB30N65DM6AG
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.| Part No. | STB30N65DM6AG |
|---|---|
| Datasheet | STB30N65DM6AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade N-channel 650V 28A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STB30N65DM6AG VDS 650 V RDS(on) max. 115 mΩ ID 28 A● AEC-Q101 qualified
● Fast-recovery body diode
● Lower RDS(on) per area vs previous generation
● Low gate charge, input capacitance and resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
● Switching applications S(3) AM01476v1_tabDESCRIPTION
Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STB30N65DM6AG Product summary Order code STB30N65DM6AG Marking 30N65DM6 Package D²PAK Packing Tape and reel DS13770 - Rev 2 - September 2025 For further information, contact your local STMicroelectronics sales office. STB30N65DM6AG Electrical ratings 1 Electrical ratings Table 1. Absolute...
