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STB30N65M2AG - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • Order code STB30N65M2AG VDS 650 V RDS(on) max. 0.18 Ω ID 20 A.
  • AEC-Q101 qualified.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected G(1).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB30N65M2AG Datasheet Automotive-grade N-channel 650 V, 0.15 Ω typ., 20 A MDmesh M2 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) Features Order code STB30N65M2AG VDS 650 V RDS(on) max. 0.18 Ω ID 20 A • AEC-Q101 qualified • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected G(1) Applications • Switching applications S(3) AM01475V1 Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.