STB30N65M2AG Description
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. STB30N65M2AG Electrical ratings 1 Electrical ratings Table.
STB30N65M2AG Key Features
- AEC-Q101 qualified
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected