Datasheet Summary
N-channel 200 V, 0.065 Ω, 30 A STripFET™ Power MOSFET in D2PAK package
- production data
Features
Order code VDSS RDS(on) ID STB30NF20L 200 V 0.075 Ω 30 A
PTOT 150 W
- Gate charge minimized
- 100% avalanche tested
- Excellent figure of merit (RDS- Qg)
- Very good manufacturing repeatability
- Very low intrinsic capacitance
Applications
- Automotive
Description
This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing...
