STMicroelectronics STB30NF20L
This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.| Part No. | STB30NF20L |
|---|---|
| Datasheet | STB30NF20L Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDSS RDS(on) ID STB30NF20L 200 V 0.075 Ω 30 A PTOT 150 W● Gate charge minimized
● 100% avalanche tested
● Excellent figure of merit (RDS* Qg)
● Very good manufacturing repeatability
● Very low intrinsic capacitance
APPLICATIONS
● AutomotiveDESCRIPTION
TAB 3 1 D²PAK Figure 1. Internal schematic diagram $ 4!" ' 3 Table 1. Device summary Order code STB30NF20L Marking 30NF20L Package D²PAK !- V Packaging Tape and reel March 2012 This is information on a product in full production. Doc ID 022753 Rev 2 1/14 14 Contents Contents STB30NF20L 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
