STMicroelectronics STB30NM50N
This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge.| Part No. | STB30NM50N |
|---|---|
| Datasheet | STB30NM50N Download |
| Manufacturer |  STMicroelectronics |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
3 1 l TO-247 3 2 Type STB30NM50N STI30NM50N STF30NM50N STP30NM50N STW30NM50N VDSS (@Tjmax) 550 V 550 V 550 V RDS(on) max < 0.115 Ω < 0.115 Ω < 0.115 Ω < 0.115 Ω < 0.115 Ω ID 27 A 27 A 27 A 27 A D²PAK ww re .nu at an e ce. 8 com Tr ia 27 A(1) TO-220 550 V 550 V 1. Limited only by maximum temperature allowed●
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● 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Application
● Switching applications
DESCRIPTION
PD s b O t e l o Table 1. Order codes STB30NM50N STI30NM50N STF30NM50N STP30NM50N STW30NM50N F w C It is therefore suitable for the most demanding high efficiency converters. P e d o r t c u ) (s s b O t e l o 1 r P e u d o 1 2 3 ) s ( ct I²PAK 1 2 3 12 3 TO-220FP Figure 1. Internal schematic diagram Device summary Marking 30NM50N 30NM50N 30NM50N 30NM50N 30NM50N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube September 2008 Rev 2 1/18 18 Contents STB/I/F/P/W30NM50N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
