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STB30NM50N - Power MOSFET

General Description

Table 1.

This series of devices is designed using the second generation of MDmesh™ Technology.

Key Features

  • 3 1 l TO-247 3 2 Type STB30NM50N STI30NM50N STF30NM50N STP30NM50N STW30NM50N VDSS (@Tjmax) 550 V 550 V 550 V RDS(on) max < 0.115 Ω < 0.115 Ω < 0.115 Ω < 0.115 Ω < 0.115 Ω ID 27 A 27 A 27 A 27 A D²PAK ww re . nu at an e ce. 8 com Tr ia 27 A(1) TO-220 550 V 550 V 1. Limited only by maximum temperature allowed.
  • 100% avalanche tested Low input capacitance and gate charge Low gate input resistance.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N N-channel 500 V, 0.090 Ω, 27 A MDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features 3 1 l TO-247 3 2 Type STB30NM50N STI30NM50N STF30NM50N STP30NM50N STW30NM50N VDSS (@Tjmax) 550 V 550 V 550 V RDS(on) max < 0.115 Ω < 0.115 Ω < 0.115 Ω < 0.115 Ω < 0.115 Ω ID 27 A 27 A 27 A 27 A D²PAK ww re .nu at an e ce. 8 com Tr ia 27 A(1) TO-220 550 V 550 V 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Application ■ Switching applications Description PD s b O t e l o Table 1.