STMicroelectronics STB33N60M6
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.| Part No. | STB33N60M6 |
|---|---|
| Datasheet | STB33N60M6 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 600V 25A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STB33N60M6 600 V 125 mΩ 25 A● Reduced switching losses
● Lower RDS(on) per area vs previous generation
● Low gate input resistance
● 100% avalanche tested
● Zener-protected Application G(1)
● Switching applications
● LLC converters
● Boost PFC converters S(3)
DESCRIPTION
AM01476v1_tab STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STB33N60M6 Product summary Order code STB33N60M6 Marking 33N60M6 Package D²PAK Packing Tape and reel DS13003 - Rev 2 - August 2025 For further information, contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at Tcase = 25 °C ID Drain...
