STB33N60M2 Key Features
- Extremely low gate charge
- Lower RDS(on) x area vs previous generation
- MDmesh™ II technology
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
- Part: STB33N60M2
- Manufacturer: STMicroelectronics (official site)
- Size: 1.00 MB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STB33N60DM2 | N-channel Power MOSFET |
| STB33N60DM6 | N-channel MOSFET |
| STB33N65M2 | N-channel Power MOSFET |
| STB30N65DM6AG | Automotive-grade N-channel Power MOSFET |
| STB30N65M2AG | N-channel Power MOSFET |
STB33N60M2 Description
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: This revolutionary Power MOSFET associates a vertical structure to the pany's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.