STB33N60M2 Overview
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: This revolutionary Power MOSFET associates a vertical structure to the pany's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
STB33N60M2 Key Features
- Extremely low gate charge
- Lower RDS(on) x area vs previous generation
- MDmesh™ II technology
- Low gate input resistance
- 100% avalanche tested
- Zener-protected