STMicroelectronics STB33N60M2
This device is an N-channel Power MOSFET developed using MDmesh M2 AM01476v1_tab technology.| Part No. | STB33N60M2 |
|---|---|
| Datasheet | STB33N60M2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 26A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS @ TJ max. RDS(on) max. ID STB33N60M2 650 V 0.125 Ω 26 A● Extremely low gate charge
● Excellent output capacitance (Coss) profile
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applications G(1)● LLC converters, resonant converters
DESCRIPTION
S(3) Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STB33N60M2 Product summary Order code STB33N60M2 Marking 33N60M2 Package D²PAK Packing Tape and reel DS9930 - Rev 4 - August 2025 For further information, contact your local STMicroelectronics sales office. STB33N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissi...
