Datasheet Details
| Part number | STB33N60M2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 1.00 MB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet |
 STB33N60M2 Datasheet
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General Description
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.
This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.
Key Features
- TAB 1 D 2 PAK 3 Figure 1. Internal schematic diagram , TAB AM15572v1 Order code STB33N60M2 VDS @ TJmax 650 V RDS(on) max 0.125 Ω ID 26 A.
- Extremely low gate charge.
- Lower RDS(on) x area vs previous generation.
- MDmesh™ II technology.
- Low gate input resistance.
- 100% avalanche tested.
- Zener-protected.