STB33N60DM6 Key Features
- Fast-recovery body diode
- Lower RDS(on) per area vs previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
- Part: STB33N60DM6
- Manufacturer: STMicroelectronics (official site)
- Size: 617.56 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STB33N60DM2 | N-channel Power MOSFET |
| STB33N60M2 | N-CHANNEL POWER MOSFET |
| STB33N65M2 | N-channel Power MOSFET |
| STB30N65DM6AG | Automotive-grade N-channel Power MOSFET |
| STB30N65M2AG | N-channel Power MOSFET |
STB33N60DM6 Description
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. pared with the previous MDmesh fast generation, DM6 bines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters....