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STB33N60DM6 - N-channel MOSFET

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series.

Key Features

  • Order code VDS RDS(on) max. STB33N60DM6 600 V 128 mΩ.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected ID 25 A.

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Full PDF Text Transcription for STB33N60DM6 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STB33N60DM6. For precise diagrams, and layout, please refer to the original PDF.

STB33N60DM6 Datasheet N-channel 600 V, 115 mΩ typ., 25 A, MDmesh™ DM6 Power MOSFET in a D2PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475V1 Features Order code VD...

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e TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475V1 Features Order code VDS RDS(on) max. STB33N60DM6 600 V 128 mΩ • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected ID 25 A Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series.

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