STMicroelectronics STB33N60DM6
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.| Part No. | STB33N60DM6 |
|---|---|
| Datasheet | STB33N60DM6 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 25A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STB33N60DM6 600 V 128 mΩ 25 A● Fast-recovery body diode
● Lower RDS(on) per area vs previous generation
● Low gate charge, input capacitance and resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
G(1)● Switching applications
DESCRIPTION
S(3) AM01476v1_tab Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STB33N60DM6 Product summary Order code STB33N60DM6 Marking 33N60DM6 Package D2PAK Packing Tape and reel DS12904 - Rev 3 - September 2025 For further information, contact your local STMicroelectronics sales office. STB33N60DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol...
