STB33N60DM6 Datasheet (PDF) Download
STMicroelectronics
STB33N60DM6

Overview

  • Fast-recovery body diode
  • Lower RDS(on) per area vs previous generation
  • Low gate charge, input capacitance and resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected ID 25 A