STMicroelectronics STB33N60DM2
600V 24A N-Channel Power MOSFET
| Part No. | STB33N60DM2 |
|---|---|
| Datasheet | STB33N60DM2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 24A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
3 1 TAB D2PAK Order code STB33N60DM2 VDS @ TJmax. RDS(on) max. STP33N60DM2 650 V 130 mΩ STW33N60DM2 TO-220 1 23 TO-247 3 2 1●
● Fast-recovery body diode Extremely low gate charge and input capacitance D(2, TAB)
● Low on-resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness G(1)
● Zener-protected ID 24 A
APPLICATIONS
● Switching applications S(3) AM01476v1_tabDESCRIPTION
These high voltage N-channel Power MOSFETs are part of the MDmesh DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STB33N60DM2 STP33N60DM2 STW33N60DM2 DS10564 - Rev 4 - August 2025 For further information, contact your local STMicroelectronics sales office. STB33N60DM2, STP33N60DM2, STW33N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol...
