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STB33N60DM2 - N-channel Power MOSFET

Description

These high voltage N-channel Power MOSFETs are part of the MDmesh DM2 fast recovery diode series.

Features

  • Order code VDS @ TJmax. STB33N60DM2 STP33N60DM2 650 V STW33N60DM2.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected RDS(on) max. 130 mΩ ID 24 A.

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Datasheet preview – STB33N60DM2

Datasheet Details

Part number STB33N60DM2
Manufacturer STMicroelectronics
File Size 554.67 KB
Description N-channel Power MOSFET
Datasheet download datasheet STB33N60DM2 Datasheet
Additional preview pages of the STB33N60DM2 datasheet.

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Full PDF Text Transcription

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STB33N60DM2, STP33N60DM2, STW33N60DM2 Datasheet N-channel 600 V, 110 mΩ typ., 24 A MDmesh DM2 Power MOSFET in D²PAK, TO‑220 and TO‑247 packages TAB 3 1 TAB D2PAK TO-220 1 23 TO-247 3 2 1 D(2, TAB) G(1) Features Order code VDS @ TJmax. STB33N60DM2 STP33N60DM2 650 V STW33N60DM2 • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected RDS(on) max. 130 mΩ ID 24 A Applications S(3) • Switching applications AM01476v1_tab Description These high voltage N-channel Power MOSFETs are part of the MDmesh DM2 fast recovery diode series.
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