STB34N50DM2AG Datasheet (STMicroelectronics)

Part STB34N50DM2AG
Description N-CHANNEL POWER MOSFET
Category MOSFET
Manufacturer STMicroelectronics
Size 753.73 KB
Pricing from 16.2564 USD, available from Microchip USA and Component Stockers USA.Powered by Octopart
STMicroelectronics

STB34N50DM2AG Overview

Key Specifications

Package: TO-263-3
Mount Type: Surface Mount
Max Operating Temp: 150 °C
Min Operating Temp: -55 °C

Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Key Features

  • Designed for automotive applications and AEC-Q101 qualified
  • Fast-recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance
  • 100% avalanche tested

Price & Availability

Seller Inventory Price Breaks Buy
Microchip USA 1685 150+ : 16.2564 USD
1000+ : 16.1386 USD
10000+ : 16.0208 USD
View Offer
Component Stockers USA 12663 1+ : 3.23 USD
10+ : 3.17 USD
100+ : 3.07 USD
1000+ : 2.97 USD
View Offer