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STB34N50DM2AG - N-CHANNEL POWER MOSFET

General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.

Key Features

  • Order code VDS STB34N50DM2AG 500 V RDS(on) max. 0.12 Ω ID PTOT 26 A 190 W.
  • Designed for automotive.

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STB34N50DM2AG Automotive-grade N-channel 500 V, 0.10 Ω typ., 26 A MDmesh™ DM2 Power MOSFET in a D²PAK package Datasheet - production data TAB 3 1 D2PAK Figure 1: Internal schematic diagram Features Order code VDS STB34N50DM2AG 500 V RDS(on) max. 0.12 Ω ID PTOT 26 A 190 W  Designed for automotive applications and AEC-Q101 qualified  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.