STB34N50DM2AG
STB34N50DM2AG is N-CHANNEL POWER MOSFET manufactured by STMicroelectronics.
ures
Order code
STB34N50DM2AG 500 V
RDS(on) max.
0.12 Ω
ID PTOT 26 A 190 W
- Designed for automotive applications and AEC-Q101 qualified
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
- Switching applications
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Order code STB34N50DM2AG
Table 1: Device summary
Marking
Package
34N50DM2
D²PAK
Packing...
