STB35N60DM2 Datasheet (STMicroelectronics)

Part STB35N60DM2
Description N-channel Power MOSFET
Category MOSFET
Manufacturer STMicroelectronics
Size 749.97 KB
Pricing from 3.08 USD, available from TME and DigiKey.Powered by Octopart
STMicroelectronics

STB35N60DM2 Overview

Key Specifications

Package: TO-263-3
Mount Type: Surface Mount
Pins: 3
Max Operating Temp: 150 °C

Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Key Features

  • Fast-recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness

Price & Availability

Seller Inventory Price Breaks Buy
TME 2000 1000+ : 3.08 USD View Offer
TME 2000 1000+ : 3.08 EUR View Offer