Datasheet4U Logo Datasheet4U.com

STB35N60DM2 - N-channel Power MOSFET

General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.

Key Features

  • Order code VDS STB35N60DM2 600 V RDS(on) max. 0.110 Ω ID PTOT 28 A 210 W.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STB35N65M5 N-Channel MOSFET INCHANGE
STB35NF10 N-CHANNEL Power MOSFET ST Microelectronics
STB300NH02L N-CHANNEL Power MOSFET ST Microelectronics
STB30120C SCHOTTKY RECTIFIER SMC Diode
STB30150C SCHOTTKY RECTIFIER SMC Diode

Other Datasheets by STMicroelectronics

Part Number Description
STB35N65M5 N-channel Power MOSFET
STB30N65DM6AG Automotive-grade N-channel Power MOSFET
STB30N65M2AG N-channel Power MOSFET
STB30N65M5 Power MOSFET
STB30N80K5 N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB35N60DM2 N-channel 600 V, 0.094 Ω typ., 28 A MDmesh™ DM2 Power MOSFET in a D²PAK package Datasheet - production data TAB 3 1 D2PAK Figure 1: Internal schematic diagram Features Order code VDS STB35N60DM2 600 V RDS(on) max. 0.110 Ω ID PTOT 28 A 210 W  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.