STMicroelectronics STB35N60DM2
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.| Part No. | STB35N60DM2 |
|---|---|
| Datasheet | STB35N60DM2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 28A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STB35N60DM2 600 V 110 mΩ 28 A● Fast-recovery body diode
● Extremely low gate charge and input capacitance
● Low on-resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
G(1)● Switching applications
DESCRIPTION
S(3) AM01476v1_tab Product status link STB35N60DM2 Product summary Order code STB35N60DM2 Marking 35N60DM2 Package D²PAK Packing Tape and reel DS11261 - Rev 2 - September 2025 For further information, contact your local STMicroelectronics sales office. STB35N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
