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STB36N60M6 - N-CHANNEL POWER MOSFET

General Description

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.

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Key Features

  • Order code STB36N60M6 VDS 600 V RDS(on) max. 99 mΩ ID 30 A.
  • Reduced switching losses.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.

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STB36N60M6 N-channel 600 V, 85 mΩ typ., 30 A MDmesh™ M6 Power MOSFET in a D²PAK package Datasheet - production data D2PAK Figure 1: Internal schematic diagram D (2 TAB ) G(1) Features Order code STB36N60M6 VDS 600 V RDS(on) max. 99 mΩ ID 30 A  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100% avalanche tested  Zener-protected Applications  Switching applications Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.