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STB36N60M6 Datasheet PDF

STMicroelectronics STB36N60M6

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.
Part No. STB36N60M6
Datasheet STB36N60M6 Download
Manufacturer
STMicroelectronics
Description N-channel 600V 30A Power MOSFET
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STB36N60M6 datasheet page 1 preview

FEATURES

Order code VDS RDS(on) max. ID STB36N60M6 600 V 99 mΩ 30 A
● Reduced switching losses
● Lower RDS(on) per area vs previous generation
● Low gate input resistance
● 100% avalanche tested
● Zener-protected

APPLICATIONS

G(1)
● Switching applications
● LLC converters
● Boost PFC converters S(3)

DESCRIPTION

AM01476v1_tab STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STB36N60M6 Product summary Order code STB36N60M6 Marking 36N60M6 Package D²PAK Packing Tape and reel DS10798 - Rev 5 - September 2025 For further information, contact your local STMicroelectronics sales office. STB36N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source vol...
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