STMicroelectronics STB36NM60N
Power MOSFET
| Part No. | STB36NM60N |
|---|---|
| Datasheet | STB36NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type STB36NM60N●
●
● VDSS @ TJmax 600V RDS(on) max <0.105Ω ID 32A PW 250W 100% avalanche tested Low input capacitance and gate charge Low gate input resistance D²PAK 3 1 Application
● Switching applications – Automotive Figure 1. Internal schematic diagram
DESCRIPTION
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking 36NM60N Package D²PAK Packaging Tape and reel Order codes STB36NM60N August 2009 Doc ID 16099 Rev 1 1/11 11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STB36NM60N Contents 1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
