STB3N62K3 Description
These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, bined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. DS12625 - Rev 1 - July 2018 For further information contact your local...
STB3N62K3 Key Features
- Obs S(3)
- 100% avalanche tested
- Extremely high dv/dt capability
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected