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STB40NF10L Datasheet PDF

STMicroelectronics STB40NF10L

This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application.
Part No. STB40NF10L
Datasheet STB40NF10L Download
Manufacturer
STMicroelectronics
Description N-CHANNEL POWER MOSFET
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STB40NF10L datasheet page 1 preview

DESCRIPTION

It is also intended for any application with low gate charge drive requirements.

APPLICATIONS

s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL s AUTOMOTIVE INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (q) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 100 100 ± 15 40 25 160 150 1 430 –65 to 175 175 (1) Starting T j = 25°C, I D = 20A, VDD = 40V Unit V V V A A A W W/°C mJ °C °C (q) Pulse width limited by safe operating area April 2001 1/9 STB40NF10L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1 62.5 300 °C/W °C/W...
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