STB40NF10 Datasheet PDF | STMicroelectronics

STMicroelectronics STB40NF10

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application.

Part No.	STB40NF10
Datasheet	STB40NF10 Download
Manufacturer	STMicroelectronics
Description	N-channel Power MOSFET
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DESCRIPTION

It is also intended for any application with low gate charge drive requirements.

APPLICATIONS

s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID(*) ID IDM (l) PTOT dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 ± 20 50 35 200 150 1 20 150 – 55 to 175 (1) I SD ≤40A, di/dt ≤600A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. (2) Starting T j = 25°C, I D = 40A, VDD = 50V Unit V V V A A A W W/°C V/ns mJ °C (q) Pulse width limited by safe operating area (*) Limited by Package September 2002 1/11 STP40NF10 - STB40NF10 - STB40NF10-1 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junct...