STB45NF06 Datasheet PDF

DESCRIPTION

This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 1 D2PAK INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s HIGH-EFFICIENCY DC-DC CONVERTERS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 60 60 ±20 38 26 152 80 0.53 7 –65 to 175 175 (1) I SD ≤38A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX.