STB45NF06L Datasheet PDF | STMicroelectronics

STMicroelectronics STB45NF06L

This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Part No.	STB45NF06L
Datasheet	STB45NF06L Download
Manufacturer	STMicroelectronics
Description	N-CHANNEL POWER MOSFET
Buy	Stock & Price

DESCRIPTION

D2PAK TO-220 INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s HIGH-EFFICIENCY DC-DC CONVERTERS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 60 60 ±16 38 26 152 80 0.53 7 –55 to 175 (1) ISD ≤38A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. Unit V V V A A A W W/°C V/ns °C (q ) Pulse width limited by safe operating area September 2002 1/10 STP45NF06L - STB45NF06L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.87...