STMicroelectronics STB47N60DM6AG
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.| Part No. | STB47N60DM6AG |
|---|---|
| Datasheet | STB47N60DM6AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade N-channel 600V 36A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STB47N60DM6AG VDS 600 V RDS(on) max. 80 mΩ ID 36 A● AEC-Q101 qualified
● Fast-recovery body diode
● Lower RDS(on) per area vs previous generation
● Low gate charge, input capacitance and resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
● Switching applications S(3) AM01476v1_tabDESCRIPTION
Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STB47N60DM6AG Product summary Order code STB47N60DM6AG Marking 47N60DM6 Package D²PAK Packing Tape and reel DS12070 - Rev 5 - August 2025 For further information, contact your local STMicroelectronics sales office. STB47N60DM6AG Electrical ratings 1 Electrical ratings Table 1. Absolute max...
