STMicroelectronics STB4NB80
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.STB4NB80 Specifications
- Package : D2PAK
- Mount Type : Surface Mount
- Breakdown Voltage : 800V
- Drain-Source Resistance : 3Ω
- Rise Time : 8ns
- Fall Time : 9ns
- Power Dissipation : 100W
- Max Operating Temp : 150°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | STB4NB80 |
|---|---|
| Datasheet | STB4NB80 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s I2PAK TO-262 (Suffix "-1") INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM (● ) P tot dv/dt( 1 ) V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature Value STB4NB80 STB4NB80FP 800 800 ± 30 4 2.4 16 100 1 4.5 -65 to 150 150 (1) ISD ≤4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMA...
