STB4NC80Z Datasheet | STMicroelectronics

N The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, PUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT s 1 I2PAK (Tabless TO-220) ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt(1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100p F, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature .(- )Pulse Value STP(B)4NC80Z(-1) 800 800 ± 25 4 2.5 16 100 0.8 ±50 2.5 3 -- 65 to 150 150 2000 4(- ) 2.5(- ) 16(- ) 35 0.28 STP4NC80ZFP Unit V V V A A A W W/°C m A KV V/ns V °C °C (- )Pulse width limited by safe operating area December 2002 (1)ISD ≤4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX width Limited by maximum temperature allowed 1/13 STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1 THERMAL DATA TO-220 / D2PAK / I2PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.25 30 300 TO-220FP 3.57 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol I .. AR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 4 225 Unit A m J ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions ID =...