STB4NC80Z datasheet by STMicroelectronics.
| Part number | STB4NC80Z |
|---|---|
| Datasheet | STB4NC80Z_STMicroelectronics.pdf |
| File Size | 445.83 KB |
| Manufacturer | STMicroelectronics |
| Description | N-CHANNEL MOSFET |
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The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. Unit V V/°C µA µA µA ∆BVDSS/∆TJ Breakdown Voltage Temp.
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