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STB4NC80Z-1

Manufacturer: STMicroelectronics

STB4NC80Z-1 datasheet by STMicroelectronics.

This datasheet includes multiple variants, all published together in a single manufacturer document.

STB4NC80Z-1 datasheet preview

STB4NC80Z-1 Datasheet Details

Part number STB4NC80Z-1
Datasheet STB4NC80Z-1 STB4NC80Z Datasheet (PDF)
File Size 445.83 KB
Manufacturer STMicroelectronics
Description N-CHANNEL MOSFET
STB4NC80Z-1 page 2 STB4NC80Z-1 page 3

STB4NC80Z-1 Overview

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. Unit V V/°C µA µA µA ∆BVDSS/∆TJ Breakdown Voltage Temp.

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