STB4NC80Z-1 - N-CHANNEL MOSFET

This page provides the datasheet information for the STB4NC80Z-1, a member of the STB4NC80Z N-CHANNEL MOSFET family.

Product Overview

STMicroelectronics

Datasheet Details

Part number	STB4NC80Z-1
Manufacturer	STMicroelectronics
File Size	445.83 KB
Description	N-CHANNEL MOSFET
Datasheet	STB4NC80Z-1 Datasheet
Additional preview pages of the STB4NC80Z-1 datasheet.

STB4NC80Z-1 Product details

Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.

Features

OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/13 STP4NC80Z.

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Published: Nov 18, 2008 |