STB4NC80Z-1 Description
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. Unit V V/°C µA µA µA ∆BVDSS/∆TJ Breakdown Voltage Temp.