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STB4NC80Z-1 Datasheet PDF

STMicroelectronics STB4NC80Z-1

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.
Part No. STB4NC80Z-1
Datasheet STB4NC80Z-1 Download
Manufacturer
STMicroelectronics
Description N-CHANNEL MOSFET
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STB4NC80Z-1 datasheet page 1 preview

DESCRIPTION

Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

APPLICATIONS

SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT s 1 I2PAK (Tabless TO-220) 23

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt(1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature .(*)Pulse Value STP(B)4NC80Z(-1) 800 800 ± 25 4 2.5 16 100 0.8 ±50 2.5 3 -–65 to 150 150 2000 4(*) 2.5(*) 16(*) 35 0.28 STP4NC80ZFP Unit V V V A A A W W/°C mA KV V/ns V °C °C (●)Pulse width...
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