STMicroelectronics STB50N25M5
This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary c vertical process technology, which is combined u with STMicroelectronics’ well-known rod PowerMESH™ horizontal layout structure. The resulting product has extremely low on- P resistance, which is unmatched among siliconte based Power MOSFETs, making it especially le suitable for applications which require superior Obso power density and outstanding efficiency.| Part No. | STB50N25M5 |
|---|---|
| Datasheet | STB50N25M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type VDSS RDS(on) max ID TAB STB50N25M5 250 V < 0.075 Ω 28 A t(s)● Amongst the best RDS(on)* area c
● High dv/dt capability du
● Excellent switching performance ro
● Easy to drive P
● 100% avalanche tested lete Application so
● Switching applications - Ob
DESCRIPTION
t(s) 3 1 D²PAK Figure 1. Internal schematic diagram $ OR 4!" ' 3 !- V Table 1. Device summary Order code STB50N25M5 Marking 50N25M5 Package D²PAK Packaging Tape and reel March 2012 This is information on a product in full production. Doc ID 15923 Rev 3 1/14 14 Contents Contents STB50N25M5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ......................... 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 ) 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
