STB50N25M5 Datasheet | STMicroelectronics

N-channel 250 V, 0.065 Ω, 28 A, MDmesh™ V Power MOSFET in D²PAK package - production data Features Type VDSS RDS(on) max 250 V < 0.075 Ω 28 A t(s) - Amongst the best RDS(on)- area c - High dv/dt capability du - Excellent switching performance ro - Easy to drive P - 100% avalanche tested lete Application so - Switching applications - Ob Description t(s) This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary c vertical process technology, which is bined u with STMicroelectronics’ well-known rod Power MESH™ horizontal layout structure. The resulting product has extremely low on- P resistance, which is unmatched among siliconte based Power MOSFETs, making it especially le suitable for applications which require superior Obso power density and outstanding efficiency. 3 1 D²PAK Figure 1. Internal schematic diagram $OR4!" ' 3 !-V Table 1. Device summary Order code STB50N25M5 Marking 50N25M5 Package D²PAK Packaging Tape and reel March 2012 This is information on a product in full production. Doc ID 15923 Rev...