STB50N25M5 Description
t(s) This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary c vertical process technology, which is bined u with STMicroelectronics’ well-known rod PowerMESH™ horizontal layout structure. The resulting product has extremely low on- P resistance, which is unmatched among siliconte based Power MOSFETs, making it especially le suitable for applications which require superior Obso power...
STB50N25M5 Key Features
- Amongst the best RDS(on)- area c
- High dv/dt capability du
- Excellent switching performance ro
- Easy to drive P
- 100% avalanche tested
- Switching