STMicroelectronics STB50NE10
N-Channel Power MOSFET
DESCRIPTION
le du This Power MOSFET is the latest development of so ro STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor b P shows extremely high packing density for low on- O te resistance, rugged avalanche characteristics and ) le less critical alignment steps therefore a t(s o remarkable manufacturing reproducibility. uc ObsAPPLICATIONS
rod -● Switching application 3 1 D2PAK Internal schematic diagram Obsolettee PProduct(s) Order codes olePart number ObsSTB50NE10T4 Marking B50NE10 Package D2PAK Packaging Tape & reel June 2006 Rev 5 1/13 13 Contents Contents STB50NE10 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .