STMicroelectronics STB50NE10L
N-Channel Power MOSFET
| Part No. | STB50NE10L |
|---|---|
| Datasheet | STB50NE10L Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. PRELIMINARY DATA 3 1 D2PAK TO-263 (suffix "T4") INTERNAL SCHEMATIC DIAGRAMAPPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENTABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR VGS ID ID Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC IDM(●) Ptot Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor dv/dt (1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature (●)...
