STMicroelectronics STB55NE06
This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onINTERNAL SCHEMATIC DIAGRAM resistance, rugged avalance characteristics and DataSheet4U.com less critical alignment steps therefore a remarkable manufacturing reproducibility.| Part No. | STB55NE06 |
|---|---|
| Datasheet | STB55NE06 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION D2PAK TO-263 (suffix ”T4”) DataSheeABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM (● ) P t ot dv/dt T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating F actor Peak Diode Recovery voltage slope Storage Temperature Max. O perating Junction Temperature o o o Value 60 60 ± 20 55 39 220 130 0.96 7 -65 to 175 175 ( 1) ISD ≤ 55 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Uni t V V V A A A W W/ C V/ ns o o o C C 1/8 (●) Pulse width limited by safe operating area December 1997 DataSheet4U.com DataSheet4U.com DataSheet 4 U .com STB55NE06 THERMAL DATA R t hj-ca se Rthj -amb R thc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance...
