STMicroelectronics STB55NE06L
This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics INTERNAL SCHEMATIC DIAGRAM and less critical alignment steps therefore a DataSheet4U.com remarkable manufacturing reproducibility.| Part No. | STB55NE06L |
|---|---|
| Datasheet | STB55NE06L Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc. ) s D2PAK TO-263 (suffix "T4") DataSheeABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM (● ) P tot dv/dt T stg Tj March 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 60 60 ± 15 55 39 220 130 0.86 7 -65 to 175 175 (1) ISD ≤ 55 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C 1/5 (●) Pulse width limited by safe operating area DataSheet4U.com DataSheet4U.com DataSheet 4 U .com STB55NE06L THERMAL DATA R thj-case Rthj-a...
