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STB60NF06 Datasheet PDF

STMicroelectronics STB60NF06

This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application.
Part No. STB60NF06
Datasheet STB60NF06 Download
Manufacturer
STMicroelectronics
Description N-CHANNEL Power MOSFET
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STB60NF06 datasheet page 1 preview

DESCRIPTION

It is also intended for any application with low gate charge drive requirements.

APPLICATIONS

s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL s AUTOMOTIVE INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 60 60 ± 20 60 42 240 110 0.73 4 –65 to 175 175 (1) I SD≤ 60A, di/dt≤400 A/µs, VDD≤ 24V, Tj≤TjMAX Unit V V V A A A W W/°C V/ns °C °C (q) Pulse width limited by safe operating area February 2001 1/9 STB60NF06 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.36 62...
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