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STB80N4F6AG - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Order code STB80N4F6AG VDS 40 V RDS(on) max. 6 mΩ ID 80 A.
  • Designed for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB80N4F6AG Automotive-grade N-Channel 40 V, 5.5 mΩ typ.,80 A STripFET™ F6 Power MOSFET in a D²PAK package Datasheet - production data TAB 3 1 D2PAK Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code STB80N4F6AG VDS 40 V RDS(on) max. 6 mΩ ID 80 A  Designed for automotive applications and AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.