STB80N4F6AG
STB80N4F6AG is N-channel Power MOSFET manufactured by STMicroelectronics.
Automotive-grade N-Channel 40 V, 5.5 mΩ typ.,80 A STripFET™ F6 Power MOSFET in a D²PAK package
- production data
3 1 D2PAK Figure 1: Internal schematic diagram
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G(1)
Features
Order code STB80N4F6AG
VDS 40 V
RDS(on) max. 6 mΩ
ID 80 A
- Designed for automotive applications and AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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