STB80N4F6AG Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(3) Order code STB80N4F6AG AM01475v1_Tab Table.
STB80N4F6AG Key Features
- Designed for automotive