STMicroelectronics STD10N60M6
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.| Part No. | STD10N60M6 |
|---|---|
| Datasheet | STD10N60M6 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 600V 6.4A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS @ TJmax RDS(on) max. STD10N60M6 650 V 600 mΩ● Reduced switching losses
● Lower RDS(on) per area vs previous generation
● Low gate input resistance
● 100% avalanche tested
● Zener-protected ID 6.4 A
APPLICATIONS
● Switching applications● LLC converters, resonant converters
● Boost PFC converters
DESCRIPTION
STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STD10N60M6 Product summary Order code STD10N60M6 Marking 10N60M6 Package DPAK Packing Tape and reel DS13010 - Rev 3 - May 2020 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain c...
