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STD10N60M2 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STB10N60M2, STD10N60M2, STP10N60M2 Datasheet N-channel 600 V, 0.55 Ω typ., 7.

General Description

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology.

Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.

Product status links STB10N60M2 STD10N60M2 STP10N60M2 DS9703 - Rev 4 - January 2021 For further information contact your local STMicroelectronics sales office.

Key Features

  • Order codes VDS @ TJ max. RDS(on) max. STB10N60M2 STD10N60M2 650 V 0.60 Ω STP10N60M2.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected ID 7.5 A Package D²PAK DPAK TO-220.

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