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STD10N60M2 - N-CHANNEL POWER MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology.

Key Features

  • Order codes VDS @ TJ max. RDS(on) max. STB10N60M2 STD10N60M2 650 V 0.60 Ω STP10N60M2.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected ID 7.5 A Package D²PAK DPAK TO-220.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB10N60M2, STD10N60M2, STP10N60M2 Datasheet N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a D²PAK, DPAK and TO-220 packages TAB 2 3 1 D²PAK TAB TAB 23 1 DPAK TO-220 3 2 1 D(2, TAB) G(1) S(3) AM01476v1_tab Features Order codes VDS @ TJ max. RDS(on) max. STB10N60M2 STD10N60M2 650 V 0.60 Ω STP10N60M2 • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected ID 7.5 A Package D²PAK DPAK TO-220 Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology.