Datasheet4U Logo Datasheet4U.com

STD10N60DM2 - N-channel Power MOSFET

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

Key Features

  • Order code VDS RDS(on) max. ID STD10N60DM2 600 V 530 mΩ 8A.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STD10N10 N-Channel MOSFET SamHop Microelectronics
STD10N20 N-Channel MOSFET SamHop Microelectronics
STD10N25 N-Channel MOSFET SamHop Microelectronics
STD10NF06L N-CHANNEL POWER MOSFET ST Microelectronics
STD10NF10 N-CHANNEL POWER MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STD10N60M2 N-CHANNEL POWER MOSFET
STD10NF10T4 N-CHANNEL POWER MOSFET
STD10NF30 N-CHANNEL POWER MOSFET
STD10NM50N N-Channel Power MOSFET
STD10NM60ND N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STD10N60DM2 Datasheet N-channel 600 V, 440 mΩ typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS RDS(on) max. ID STD10N60DM2 600 V 530 mΩ 8A • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description AM01476v1_tab This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.