Datasheet Summary
N-channel 600 V, 570 mΩ typ., 8 A FDmesh II Power MOSFET in a DPAK package
Features
23 1 DPAK
D(2, TAB)
Order code
VDS at TJ max.
RDS(on) max.
650 V
600 mΩ
8A
- Fast-recovery body diode
- Low gate charge and input capacitance
- Low on-resistance RDS(on)
- 100% avalanche tested
- High dv/dt ruggedness
Applications
G(1)
- Switching applications
S(3)
Description
AM01475v1_noZen
This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device Features low on-resistance and superior switching performance. It is ideal for bridge topologies...
