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STD10NM60ND - N-channel Power MOSFET

General Description

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology.

Key Features

  • TAB 23 1 DPAK D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STD10NM60ND 650 V 600 mΩ 8A.
  • Fast-recovery body diode.
  • Low gate charge and input capacitance.
  • Low on-resistance RDS(on).
  • 100% avalanche tested.
  • High dv/dt ruggedness.

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STD10NM60ND Datasheet N-channel 600 V, 570 mΩ typ., 8 A FDmesh II Power MOSFET in a DPAK package Features TAB 23 1 DPAK D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STD10NM60ND 650 V 600 mΩ 8A • Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • High dv/dt ruggedness Applications G(1) • Switching applications S(3) Description AM01475v1_noZen This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.