STMicroelectronics STD10NM60ND
This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. It is ideal for bridge topologies and ZVS phase-shift converters.| Part No. | STD10NM60ND |
|---|---|
| Datasheet | STD10NM60ND Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 23 1 DPAK D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STD10NM60ND 650 V 600 mΩ 8A● Fast-recovery body diode
● Low gate charge and input capacitance
● Low on-resistance RDS(on)
● 100% avalanche tested
● High dv/dt ruggedness
APPLICATIONS
G(1)● Switching applications S(3)
DESCRIPTION
AM01475v1_noZen Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. Product status link STD10NM60ND Product summary Order code STD10NM60ND Marking 10NM60ND Package DPAK Packing Tape and reel DS7103 - Rev 4 - June 2023 For further information contact your local STMicroelectronics sales office. STD10NM60ND Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Maximum operating junction temperature 1.
