Datasheet4U Logo Datasheet4U.com

STD10NM65N - N-Channel MOSFET

General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Order code VDS @ Tjmax. RDS(on) max. ID STD10NM65N 710 V 0.48 Ω 9A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STD10NM65N N-Channel MOSFET INCHANGE
STD10NM60N N-Channel Power MOSFET ST Microelectronics
STD10NM60N N-Channel MOSFET INCHANGE
STD10N10 N-Channel MOSFET SamHop Microelectronics
STD10N20 N-Channel MOSFET SamHop Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STD10NM60ND N-channel Power MOSFET
STD10NM50N N-Channel Power MOSFET
STD10N60DM2 N-channel Power MOSFET
STD10N60M2 N-CHANNEL POWER MOSFET
STD10NF10T4 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STD10NM65N Datasheet N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ II Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01475v1_noZen Features Order code VDS @ Tjmax. RDS(on) max. ID STD10NM65N 710 V 0.48 Ω 9A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.