Datasheet Summary
N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ II Power MOSFET in a DPAK package
23 1 DPAK
D(2, TAB)
G(1)
S(3)
AM01475v1_noZen
Features
Order code
VDS @ Tjmax.
RDS(on) max.
710 V
0.48 Ω
9A
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high...
