STMicroelectronics STD10NM65N
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.| Part No. | STD10NM65N |
|---|---|
| Datasheet | STD10NM65N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS @ Tjmax. RDS(on) max. ID STD10NM65N 710 V 0.48 Ω 9A● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
APPLICATIONS
● Switching applicationsDESCRIPTION
It is therefore suitable for the most demanding high efficiency converters. Product status STD10NM65N Product summary Order code STD10NM65N Marking 10NM65N Package DPAK Packing Tape and reel DS5566 - Rev 4 - May 2018 For further information contact your local STMicroelectronics sales office. STD10NM65N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope dv/dt Drain-source voltage slope (VDD = 520 V, ID = 9 A, VGS = 10 V) Tj Operating junction temperature range Tstg Storage temperature range 1.
